GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

Book · Sat Dec 31 00:00:00 EST 1994

OSTI ID:94439

Keshagupta, P; Radpour, F ^[1]

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1. Univ. of Cincinnati, OH (United States)

In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

• OSTI ID: 94439
• Report Number(s): CONF-940142-; ISBN 0-8194-1440-9; TRN: IM9538%%413
• Resource Relation: Conference: OE/LASE `94: conference on optics, electro-optics, and laser applications in science and engineering, Los Angeles, CA (United States), 22-29 Jan 1994; Other Information: PBD: 1994; Related Information: Is Part Of Nonlinear optics for high-speed electronics and optical frequency conversion. Proceedings, SPIE Volume 2145; Peygambarian, N.; Everitt, H.; Eckardt, R.C.; Lowenthal, D.D. [eds.]; PB: 366 p.
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
INFRARED RADIATION
RADIATION DETECTION
PHOTODETECTORS
DESIGN
PERFORMANCE
HETEROJUNCTIONS
SEMICONDUCTOR MATERIALS
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
GALLIUM PHOSPHIDES
ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
THEORETICAL DATA
SUPERLATTICES
EXPERIMENTAL DATA