Depth-resolved residual strain in MoN/Mo nanocrystalline films.

Journal Article · Mon Oct 23 00:00:00 EDT 2006 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.2364131· OSTI ID:936722

Chen, G; Singh, D; Erylimaz, O; Routbort, J; Larson, B C; Liu, W; ORNL,

The authors have applied cross-sectional x-ray microdiffraction to measure depth-resolved in-plane residual strain in nanocrystalline MoN/Mo bilayer films deposited on Si. Compressive strains with large gradients were found in the as-deposited films. After thermal annealing, the strain profiles and diffraction peak widths of the MoN and Mo layers were altered. These findings provide insights on the relationship between defects introduced during film processing and the effect of annealing on the structure and properties of magnetron-sputtered nanocrystalline films.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC); EE
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 936722
• Report Number(s): ANL/ET/JA-57164; APPLAB; TRN: US200818%%1058
• Journal Information: Appl. Phys. Lett., Vol. 89, Issue Oct. 23, 2006; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
MOLYBDENUM
MOLYBDENUM NITRIDES
RESIDUAL STRESSES
NANOSTRUCTURES
ANNEALING
DEFECTS
MODIFICATIONS