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Title: Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.
Authors:
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Publication Date:
OSTI Identifier:
929610
Report Number(s):
NREL/CP-520-42547
TRN: US200813%%260
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California
Research Org:
National Renewable Energy Laboratory (NREL), Golden, CO.
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CONFIGURATION; DESIGN; DISLOCATIONS; EFFICIENCY; PERFORMANCE; SOLAR CELLS GE FREE; INVERTED CONFIGURATION; PV; TRIPLE-JUNCTION; SOLAR CELLS; HIGH EFFICIENCY; SEMICONDUCTOR; LOW-STRESS; METAMORPHIC JUNCTION; SOLAR SPECTRUM; Solar Energy - Photovoltaics