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Title: Quantum Efficiency of ZnO Nanowire Nanolasers

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2001754· OSTI ID:928229

Crystalline ZnO nanowires were grown on sapphire and silicon substrates using pulsed-laser deposition. The optical properties of nanowire nanolasers, including their absolute light emission intensity and external and internal quantum efficiencies were experimentally determined. The external differential quantum efficiency was measured to be as high as 60% for lasing ZnO nanowires of 7.5 {micro}m in length, compared to a value of approximately 10% for photoluminescence. The absolute light emission intensity for individual nanowires was found to be in the vicinity of 0.1 mW. By measuring the dependence of external differential quantum efficiency on the cavity length, the internal quantum efficiency of ZnO nanowire nanolasers was determined to be about 85%.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
DE-AC02-05CH11231
OSTI ID:
928229
Report Number(s):
LBNL-58315; APPLAB; R&D Project: 00000; TRN: US200815%%792
Journal Information:
Applied Physics Letters, Vol. 87, Issue 4; Related Information: Journal Publication Date: 2005; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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