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Title: Plan-view image contrast of dislocations in GaN.

We demonstrate that when vertical threading dislocations in (0001) GaN are imaged in plan-view by transmission electron microscopy, a surface-relaxation contrast operates in addition to that due to the strain fields of dislocations passing through the specimen. We show that all three dislocation types (edge, screw, and mixed) can be detected in the same image using g = (11{bar 2}0) and 18{sup o} specimen tilt from [0001], allowing total densities to be assessed properly. The type of an individual dislocation can also be readily identified.
Authors:
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Publication Date:
OSTI Identifier:
927646
Report Number(s):
SAND2003-2243J
TRN: US200816%%1157
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in Applied Physics Letters.
Research Org:
Sandia National Laboratories
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; EDGE DISLOCATIONS; SCREW DISLOCATIONS; MIXTURES; TRANSMISSION ELECTRON MICROSCOPY