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Title: One-dimensional silicon-cadmium selenide heterostructures.

Journal Article · · J. Phys. Chem. C
DOI:https://doi.org/10.1021/jp071699z· OSTI ID:915019

We report the synthesis and characterization of 1D Si-CdSe heteronanostructures with different morphologies such as coaxial, biaxial, sandwiched, pattern wrapping, coiling, structures etc., via a one-step metal catalyzed thermal evaporation method. Both Si and CdSe exhibit single crystalline characteristics in the heterostructures, as revealed by scanning transmission electron microscopy. The Si nanowires formed directly from the Si substrate via the solid-liquid-solid process acts as the absorption site for CdSe deposition as well as the template for the formation of 1D Si-CdSe heterostructures. Time-resolved X-ray excited optical luminescence from the 1D Si-CdSe heteronanostructures reveals two main emission features at 530 and 637 nm with slow and fast decay lifetime, respectively. The 530 and 637 nm emission is associated with the Si and CdSe component of the heterostructures, respectively.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC); NSERC and CRC of Canada
DOE Contract Number:
DE-AC02-06CH11357
OSTI ID:
915019
Report Number(s):
ANL/XSD/JA-59526; TRN: US200817%%65
Journal Information:
J. Phys. Chem. C, Vol. 111, Issue 24 ; 2007
Country of Publication:
United States
Language:
ENGLISH