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Title: Gate Drive For High Speed, High Power IGBTs

A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
908994
Report Number(s):
SLAC-PUB-12591
TRN: US0703811
DOE Contract Number:
AC02-76SF00515
Resource Type:
Conference
Resource Relation:
Conference: Presented at 28th International Conference on Plasma Science (ICOPS 2001) and 13th International Pulsed Power Conference (IPPC 2001), Las Vegas, Nevada, 17-22 Jun 2001
Research Org:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; DESIGN; DETECTION; ELECTRICAL FAULTS; IMPLEMENTATION; INDUCTION; LINEAR COLLIDERS; PLASMA; STANFORD LINEAR ACCELERATOR CENTER Instrumentation,ENG