Atomistic Simulation of the Size and Orientation Dependences of Thermal Conductivity in GaN Nanowires
The thermal conductivity of GaN nanowires has been determined computationally, by applying nonequilibrium atomistic simulation methods using the Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] potentials. The simulation results show that the thermal conductivity of the GaN nanowires is smaller than that of a bulk crystal and increases with increasing diameter. Surface scattering of phonons and the high surface to volume ratios of the nanowires are primarily responsible for the reduced thermal conductivity and its size dependence behavior. The thermal conductivity is also found to decrease with increasing temperature, which is due to phonon-phonon interactions at high temperatures. The thermal conductivity also exhibits a dependence on axial orientation of the nanowires.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 908730
- Report Number(s):
- PNNL-SA-54253; APPLAB; 8208; KC0201020; TRN: US0703753
- Journal Information:
- Applied Physics Letters, 90(16):Art. No. 161923, Vol. 90, Issue 16; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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