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Title: Size dependence of melting of GaN nanowires with triangular cross sections

Molecular dynamics simulations have been used to study the melting of GaN nanowires with triangular cross-sections. The curve of the potential energy, along with the atomic configuration is used to monitor the phase transition. The thermal stability of GaN nanowires is dependent on the size of the nanowires. The melting temperature of the GaN nanowires increases with the increasing of area cross-section of the nanowires to a saturation value. An interesting result is that of the nanowires start to melt from the edges, then the surface, and extends to the inner regions of nanowires as temperature increases.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
901180
Report Number(s):
PNNL-SA-53257
Journal ID: ISSN 0021-8979; JAPIAU; 8208; KC0201020; TRN: US200713%%83
DOE Contract Number:
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics, 101(4):043511; Journal Volume: 101; Journal Issue: 4
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; MELTING; POTENTIAL ENERGY; QUANTUM WIRES; MOLECULAR DYNAMICS METHOD; SIZE GaN; nanowires; Melting; Molecular dynamics; Environmental Molecular Sciences Laboratory