The interaction of defects and H in proton-irradiated GaN(Mg,H).
Journal Article
·
· Proposed for publication in Journal of Applied Physics.
OSTI ID:890596
No abstract prepared.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 890596
- Report Number(s):
- SAND2004-2911J; TRN: US0604727
- Journal Information:
- Proposed for publication in Journal of Applied Physics., Journal Name: Proposed for publication in Journal of Applied Physics.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H).
Interaction of defects and H in proton-irradiated GaN(Mg, H)
Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)
Journal Article
·
Wed Jun 01 00:00:00 EDT 2005
· Proposed for publication in the Journal of Applied Physics.
·
OSTI ID:890596
Interaction of defects and H in proton-irradiated GaN(Mg, H)
Journal Article
·
Sun May 01 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:890596
Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)
Journal Article
·
Tue Aug 15 00:00:00 EDT 2006
· Journal of Applied Physics
·
OSTI ID:890596