Atomic structure of defects in GaN:Mg grown with Ga polarity
The atomic structure of characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reverse polarity compared to the matrix. It was proposed that lateral overgrowth of the cavities restores matrix polarity on the defect base. Exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 +- 0.2 Angstrom displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid is observed. Changes in the shape of the NKa edge and oxygen presence on the defect walls were detected using electron energy loss spectroscopy. These observations explain the Mg compensation and decrease of acceptor concentration in heavily doped GaN:Mg.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 886981
- Report Number(s):
- LBNL-56491; PRLTAO; R&D Project: 513340; BnR: KC0201030; TRN: US0604152
- Journal Information:
- Physical Review Letters, Vol. 93, Issue 20; Related Information: Journal Publication Date: Nov. 12,2004; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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