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Title: Etching Of Semiconductor Wafer Edges

A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.
Authors:
 [1] ;  [2]
  1. (Billerica, MA)
  2. (Dunbarton, NH)
Publication Date:
OSTI Identifier:
879579
Report Number(s):
US 6660643
US patent application 09/261616
DOE Contract Number:
NREL-ZAF-6-14271-13
Resource Type:
Patent
Country of Publication:
United States
Language:
English