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Title: Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.
Authors:
 [1] ;  [1] ;  [1]
  1. (Albuquerque, NM)
Publication Date:
OSTI Identifier:
872148
Report Number(s):
US 5871591
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Research Org:
SANDIA CORP
Country of Publication:
United States
Language:
English
Subject:
silicon; solar; cells; self-aligned; selective-emitter; plasma-etchback; process; potentially; low-cost; process; forming; passivating; selective; emitter; process; plasma; etch; heavily; doped; emitter; improve; performance; grids; solar; cell; mask; plasma; etch; emitter; region; grids; etched; region; beneath; grids; remains; heavily; doped; contact; resistance; process; potentially; low-cost; requires; alignment; emitter; etch; silicon; nitride; layer; deposited; plasma-enhanced; chemical; vapor; deposition; solar; cell; annealed; forming; gas; forming gas; heavily doped; heavily doped; silicon nitride; chemical vapor; solar cell; solar cell; solar cell; solar cells; vapor deposition; silicon solar; contact resistance; plasma etch; plasma etch; nitride layer; low-cost process; plasma-etchback process /136/