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Title: Variable temperature semiconductor film deposition

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.
Authors:
 [1] ;  [2]
  1. (Golden, CO)
  2. (Lakewood, CO)
Publication Date:
OSTI Identifier:
871346
Report Number(s):
US 5712187
DOE Contract Number:
AC36-83CH10093
Resource Type:
Patent
Research Org:
Midwest Research Institute
Country of Publication:
United States
Language:
English
Subject:
variable; temperature; semiconductor; film; deposition; method; depositing; semiconductor; material; substrate; method; sequentially; comprises; providing; semiconductor; material; depositable; vapor; deposition; substrate; depositing; semiconductor; material; substrate; heating; substrate; temperature; sufficient; semiconductor; material; form; film; layer; grain; size; continually; depositing; semiconductor; material; substrate; cooling; substrate; temperature; sufficient; semiconductor; material; form; film; layer; deposited; film; layer; grain; size; grain; size; raising; substrate; temperature; continuing; continuing; deposit; semiconductor; material; form; third; film; layer; anneal; film; layers; single; layer; favorable; efficiency; characteristics; photovoltaic; applications; preferred; semiconductor; material; cadmium; telluride; deposited; glass; oxide; substrate; thereon; film; layer; cadmium; sulfide; semiconductor film; variable temperature; oxide substrate; film layers; film deposition; single layer; semiconductor material; semiconductor material; semiconductor material; semiconductor material; semiconductor material; semiconductor material; semiconductor material; semiconductor material; grain size; grain size; grain size; temperature sufficient; temperature sufficient; layer deposited; film layer; film layer; film layer; film layer; film layer; film layer; cadmium telluride; cadmium sulfide; substrate temperature; photovoltaic applications; sequentially comprises; rate temperature; method sequentially; temperature semiconductor /438/136/