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Title: Silicon on insulator with active buried regions

A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.
Authors:
 [1]
  1. (Menlo Park, CA)
Publication Date:
OSTI Identifier:
870276
Report Number(s):
US 5488012
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Patent
Research Org:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Country of Publication:
United States
Language:
English
Subject:
silicon; insulator; active; buried; regions; method; forming; patterned; buried; components; collectors; sources; drains; silicon-on-insulator; soi; devices; method; carried; epitaxially; growing; suitable; sequence; single; multiple; etch; stop; layers; silicon; layer; silicon; substrate; masking; silicon; desired; pattern; exposed; introducing; dopant; activating; silicon; layer; form; doped; regions; bonding; silicon; layer; insulator; substrate; removing; silicon; substrate; method; additionally; involves; forming; electrical; contact; regions; silicon; layer; buried; collectors; etch stop; top layer; silicon layer; silicon layer; silicon layer; silicon layer; electrical contact; silicon substrate; silicon substrate; involves forming; desired pattern; stop layer; method additionally; insulator substrate; doped regions; forming electrical; patterned buried; epitaxially growing; introducing dopant; suitable sequence; forming patterned; buried regions; buried components; active buried /438/148/