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Title: Asymmetrical field emitter

Providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure.
Authors:
 [1] ;  [1]
  1. (Albuquerque, NM)
Publication Date:
OSTI Identifier:
870112
Report Number(s):
US 5457355
DOE Contract Number:
AC04-76DP00789
Resource Type:
Patent
Research Org:
AT & T CORP
Country of Publication:
United States
Language:
English
Subject:
asymmetrical; field; emitter; providing; field; emitter; asymmetrical; emitter; structure; sharp; tip; close; proximity; gate; preferred; embodiment; asymmetrical; emitter; gate; emitter; tip; coupled; substrate; gate; connected; step; substrate; step; top; surface; wall; substantially; parallel; emitter; tip; emitter; close; proximity; gate; emitter; emitter; potential; gate; gate; potential; potentials; appropriate; values; electrons; emitted; emitter; embodiment; gate; separated; emitter; oxide; layer; emitter; etched; anisotropically; form; tip; asymmetrical; structure; top surface; close proximity; close proximity; preferred embodiment; oxide layer; substantially parallel; field emitter; field emitter; emitter structure; appropriate values; asymmetrical emitter; asymmetrical emitter /313/