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Title: Method for accurate growth of vertical-cavity surface-emitting lasers

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.
Authors:
 [1] ;  [1] ;  [1]
  1. (Albuquerque, NM)
Publication Date:
OSTI Identifier:
869790
Report Number(s):
US 5397739
DOE Contract Number:
AC04-76DP00789
Resource Type:
Patent
Research Org:
AT & T CORP
Country of Publication:
United States
Language:
English
Subject:
method; accurate; growth; vertical-cavity; surface-emitting; lasers; report; method; accurate; growth; vertical-cavity; surface-emitting; lasers; vcsels; method; single; reflectivity; spectrum; measurement; determine; structure; partially; completed; vcsel; critical; growth; information; extracted; growth; rates; allows; imprecisions; growth; parameters; compensated; growth; remaining; structure; completed; accurate; critical; dimensions; method; routinely; grow; lasing; vcsels; fabry-perot; cavity; resonance; wavelengths; controlled; cavity surface; cavity surface; surface-emitting laser; surface-emitting laser; growth rate; vertical-cavity surface-emitting; vertical-cavity surface-emitting; partially completed; surface-emitting lasers; surface-emitting lasers; critical dimension; growth rates; emitting laser; emitting laser; fabry-perot cavity; cavity resonance; resonance wavelengths; resonance wavelength; emitting lasers; emitting lasers; accurate growth; accurate growth; critical dimensions /438/117/