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Title: Scanning tunneling microscope nanoetching method

A method is described for forming uniform nanometer sized depressions on the surface of a conducting substrate. A tunneling tip is used to apply tunneling current density sufficient to vaporize a localized area of the substrate surface. The resulting depressions or craters in the substrate surface can be formed in information encoding patterns readable with a scanning tunneling microscope.
Authors:
 [1] ;  [1] ;  [1]
  1. (West Lafayette, IN)
Publication Date:
OSTI Identifier:
867251
Report Number(s):
US 4896044
DOE Contract Number:
FG02-84ER45162
Resource Type:
Patent
Research Org:
Purdue Research Foundation (West Lafayette, IN)
Country of Publication:
United States
Language:
English
Subject:
scanning; tunneling; microscope; nanoetching; method; method; described; forming; uniform; nanometer; sized; depressions; surface; conducting; substrate; tunneling; tip; apply; tunneling; current; density; sufficient; vaporize; localized; substrate; surface; resulting; depressions; craters; substrate; surface; formed; information; encoding; patterns; readable; scanning; tunneling; microscope; scanning tunneling; scanning tunneling; tunneling microscope; tunneling microscope; current density; substrate surface; substrate surface; nanometer size; tunneling current; forming uniform; etching method; conducting substrate; density sufficient /250/216/347/369/