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Title: Thin film photovoltaic device

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.
Authors:
 [1] ;  [1]
  1. (Wilmington, DE)
Publication Date:
OSTI Identifier:
864283
Report Number(s):
US 4342879
DOE Contract Number:
EG-77-C-01-4042
Resource Type:
Patent
Research Org:
Solar Energy Research Institute
Country of Publication:
United States
Language:
English
Subject:
film; photovoltaic; device; film; photovoltaic; solar; cell; utilizes; zinc; phosphide; semiconductor; homojunction; type; comprising; n-type; conductivity; region; forming; electrical; junction; p-type; region; regions; consisting; essentially; semiconductor; material; n-type; region; formed; treating; zinc; phosphide; extrinsic; dopant; magnesium; semiconductor; formed; multilayer; substrate; opaque; contact; various; transparent; contacts; including; metal; film; chemical; composition; n-type; dopant; conductive; oxides; metal; grids; zinc phosphide; zinc phosphide; n-type dopant; metal film; chemical composition; conductive oxide; consisting essentially; solar cell; semiconductor material; photovoltaic device; film photovoltaic; film photovoltaic; p-type region; photovoltaic solar; n-type region; metal grids; multilayer substrate; type dopant; type comprising; region forming; metal grid; electrical junction /136/257/420/438/