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Title: Thin film photovoltaic device

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.
 [1] ;  [1]
  1. (Wilmington, DE)
Publication Date:
OSTI Identifier:
Report Number(s):
US 4342879
DOE Contract Number:
Resource Type:
Research Org:
Solar Energy Research Institute
Country of Publication:
United States
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