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Title: Method and structure for passivating semiconductor material

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.
Authors:
 [1]
  1. (Princeton, NJ)
Publication Date:
OSTI Identifier:
863827
Report Number(s):
US 4254426
DOE Contract Number:
EY-76-C-03-1286
Resource Type:
Patent
Research Org:
RCA Labs., Princeton, NJ (USA)
Country of Publication:
United States
Language:
English
Subject:
method; structure; passivating; semiconductor; material; structure; passivating; semiconductor; material; comprises; substrate; crystalline; semiconductor; material; relatively; film; carbon; disposed; surface; crystalline; material; layer; hydrogenated; amorphous; silicon; deposited; carbon; film; crystalline material; amorphous silicon; semiconductor material; semiconductor material; semiconductor material; hydrogenated amorphous; carbon film; material comprises; crystalline semiconductor; passivating semiconductor; passivating semiconductor; silicon deposited /257/136/438/