skip to main content

Title: Isotopically controlled semiconductors

A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.
Authors:
Publication Date:
OSTI Identifier:
861238
Report Number(s):
LBNL--56781
R&D Project: 513310; BnR: KC0201030; TRN: US200601%%733
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Nuclear Science and Technology; Journal Volume: 39; Journal Issue: 4; Related Information: Journal Publication Date: 04/2002
Research Org:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org:
USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division; National ScienceFoundation Grant DMR-0109844; Max-Planck Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMMUNICATIONS; NEUTRONS; NUCLEAR REACTIONS; SOLID STATE PHYSICS; THERMAL NEUTRONS; TRANSMUTATION