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Title: Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.
Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
860729
Report Number(s):
LBNL--47764
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 43BA01; TRN: US200524%%296
DOE Contract Number:
DE-AC02-05CH11231
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 78; Journal Issue: 3; Related Information: Journal Publication Date: 01/15/2001
Research Org:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org:
USDOE Director. Office of Science; US Air Force ContractF33615-95-C-1619, Air Force Office of Scientific ResearchAFOSR-ISSA-00-0011 and N0001499-1-1067, Office of Naval Research underAir Force Contract F19628-00-C-0002
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS; ELECTRONS; HYDRIDES; IRRADIATION; POINT DEFECTS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY