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Title: TEM characterization of GaN nanowires

Transmission electron microscopy was applied to study GaN nanowires grown on carbon nanotube surfaces by chemical reaction between Ga{sub 2}O and NH{sub 3} gas in a conventional furnace. These wires grew in two crystallographic directions, <2{und 11}0> and <01{und 1}0> (fast growth directions of GaN), in the form of whiskers covered by small elongated GaN platelets. The morphology of these platelets is similar to that observed during the growth of single crystals from a Ga melt at high temperatures under high nitrogen pressure. It is thought that growth of nanowires in two different crystallographic directions and the arrangement of the platelets to the central whisker may be influenced by the presence of Ga{sub 2}O{sub 3} (based on the observation of the energy dispersive x-ray spectra), the interplanar spacings in the wire, and the presence of defects on the interface between the central part of the nanowire and the platelets surrounding it.
Authors:
; ;
Publication Date:
OSTI Identifier:
840974
Report Number(s):
LBNL--50192
R&D Project: 513340; TRN: US200513%%199
DOE Contract Number:
AC03-76SF00098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Electronic Materials; Journal Volume: 31; Journal Issue: 5; Other Information: Submitted to the Journal of Electronic Materials: Volume 31, No.5; Journal Publication Date: 2002; PBD: 21 Feb 2002
Research Org:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Org:
USDOE Director. Office of Science. Office of Basic Energy Sciences; Japan International Science and Technology Exchange Center (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CHEMICAL REACTIONS; DEFECTS; MONOCRYSTALS; MORPHOLOGY; NANOTUBES; NITROGEN; SPECTRA; TRANSMISSION ELECTRON MICROSCOPY