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Title: Microstructure of laterally overgrown GaN layers

Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.
Authors:
;
Publication Date:
OSTI Identifier:
835807
Report Number(s):
LBNL--47688
R&D Project: 43CA01; TRN: US200503%%61
DOE Contract Number:
AC03-76SF00098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 89; Journal Issue: 12; Other Information: Submitted to Journal of Applied Physics: Volume 89, No.12; Journal Publication Date: 06/15/2001; PBD: 3 Apr 2001
Research Org:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Org:
US Department of Energy; Air Force Office of Scientific Research. Order AFOSR-ISSA-00-0011; UK Engineering and Physical Sciences Research Council Grant GR/N16426 (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BURGERS VECTOR; DISLOCATIONS; EDGE DISLOCATIONS; MICROSTRUCTURE; OPTICAL PROPERTIES; POINT DEFECTS; SHEAR; STRESSES; TRANSMISSION ELECTRON MICROSCOPY