Process Tuning of Silica Thin-Film Deposition
Abstract
Use of high-resolution deposition-rate monitoring and programmatic control of electron-beam position results in improvements in rate consistency and uniformity of source depletion during SiO2 thin-film deposition by electron-beam evaporation.
- Authors:
- Publication Date:
- Research Org.:
- Laboratory for Laser Energetics
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 835318
- Report Number(s):
- DOE/SF-19460-573
1501; 2004-48; TRN: US200720%%115
- DOE Contract Number:
- FC52-92SF19460
- Resource Type:
- Conference
- Resource Relation:
- Conference: Optical Fabrication and Testing, Rochester, NY, 10-13 October 2004, Optical Society of America
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; THIN FILMS; ENERGY BEAM DEPOSITION; ELECTRON BEAMS; PROCESS CONTROL; MONITORING; SILICA; thin-films:desposition and fabrication; thin-films:materials and process characterization
Citation Formats
Keck, J, Oliver, J B, Gruschow, V, Spaulding, J, and Howe, J. Process Tuning of Silica Thin-Film Deposition. United States: N. p., 2004.
Web.
Keck, J, Oliver, J B, Gruschow, V, Spaulding, J, & Howe, J. Process Tuning of Silica Thin-Film Deposition. United States.
Keck, J, Oliver, J B, Gruschow, V, Spaulding, J, and Howe, J. 2004.
"Process Tuning of Silica Thin-Film Deposition". United States.
@article{osti_835318,
title = {Process Tuning of Silica Thin-Film Deposition},
author = {Keck, J and Oliver, J B and Gruschow, V and Spaulding, J and Howe, J},
abstractNote = {Use of high-resolution deposition-rate monitoring and programmatic control of electron-beam position results in improvements in rate consistency and uniformity of source depletion during SiO2 thin-film deposition by electron-beam evaporation.},
doi = {},
url = {https://www.osti.gov/biblio/835318},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 17 00:00:00 EST 2004},
month = {Fri Dec 17 00:00:00 EST 2004}
}
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