Simulation of Submicronmeter Metal-Semiconductor-Metal Ultraviolet Photodiodes no Gallium Nitride

Journal Article · Wed Sep 15 00:00:00 EDT 2004 · Solid-State Electronics

DOI:https://doi.org/10.1016/j.sse.2004.06.008· OSTI ID:829941

Li, J; Donaldson, W R; Hsiang, T Y

Ultrafast metal Semiconductor metal ultraviolet photodetectors on GaN with 0.3-mm finger width and spacing were fabricated and packaged with a specially designed fast circuit. The assembly was simulated using a distributed circuit approach with optical illumination at l = 270 nm. This is the first theoretical simulation report of this effect in ultrafast ultraviolet photodetectors on GaN. Comparison of simulations and measurements was made in a wide range of optical energies, and a close agreement was achieved with a single energy-scaling factor.

• Research Organization: Laboratory for Laser Energetics
• Sponsoring Organization: USDOE
• DOE Contract Number: FC52-92SF19460
• OSTI ID: 829941
• Report Number(s): DOE/SF-19460-551; SSELA5; 1475; 2004-39; TRN: US200720%%108
• Journal Information: Solid-State Electronics, Vol. 48; ISSN 0038-1101
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
SUBSTRATES
GALLIUM NITRIDES
PHOTODETECTORS
PHOTODIODES
SIMULATION
METALS
SEMICONDUCTOR MATERIALS
FABRICATION
Metal-semiconductor-metal
ultrafast
GaN
photodetector