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Title: Influence of dopants on defect formation in GaN

Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals.
Authors:
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Publication Date:
OSTI Identifier:
789183
Report Number(s):
LBNL--49034
R&D Project: 513340; TRN: AH200137%%381
DOE Contract Number:
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: The 4th International Conference on Nitride Semiconductors, Denver, CO (US), 07/16/2001--07/20/2001; Other Information: PBD: 15 Oct 2001
Research Org:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Org:
USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; CRYSTAL DEFECTS; DOPED MATERIALS; MAGNESIUM; BERYLLIUM; CRYSTAL STRUCTURE; CHEMICAL VAPOR DEPOSITION