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Title: DIELECTRIC PROPERTIES OF BA(0.6)SR(0.4)TiO(3) THIN FILMS WITH VARIOUS STRAIN STATES

We could systematically control the strain states of a Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} film by depositing a very thin Ba{sub 1{minus}x}Sr{sub x}TiO{sub 3} interlayer between the main layer of the Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} and a MgO(001) substrate. Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} films showed very strong dependence of dielectric properties on the strain states. The strain induced by the MgO substrate was relaxed faster than that induced by an interlayer.
Authors:
; ;
Publication Date:
OSTI Identifier:
777450
Report Number(s):
LA-UR-01-1929
TRN: AH200123%%124
DOE Contract Number:
W-7405-ENG-36
Resource Type:
Conference
Resource Relation:
Conference: Conference title not supplied, Conference location not supplied, Conference dates not supplied; Other Information: PBD: 1 Apr 2001
Research Org:
Los Alamos National Lab., NM (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC PROPERTIES; STRAINS; SUBSTRATES; THIN FILMS