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Title: GaN Electronics For High Power, High Temperature Applications

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
760777
Report Number(s):
SAND2000-1467C
TRN: AH200037%%279
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: European Materials Research Society Meeting, Strasbourg (FR), 06/01/2000; Other Information: PBD: 12 Jun 2000
Research Org:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FABRICATION; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; PERFORMANCE; RECTIFIERS; GALLIUM NITRIDES; ALUMINIUM NITRIDES GAN; RECTIFIERS; BIPOLAR TRANSISTORS; MOSFETS