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Title: Ultrafast Scanning Tunneling Microscopy Using a Photoexcited Low-Temperature-Grown GaAs Tip

The authors report ultrafast scanning tunneling microscopy using a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. They use this tip to detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution of 1.7 ps. A dependence of the transient signal upon spatial position of the tip is revealed, indicating that the signal arises from areas on the sample smaller than {approximately}20nm.
Authors:
; ;
Publication Date:
OSTI Identifier:
759259
Report Number(s):
LA-UR-98-4473
TRN: AH200028%%94
DOE Contract Number:
W-7405-ENG-36
Resource Type:
Conference
Resource Relation:
Conference: Ultrafast Phenomena XI, Garmisch-Partenkirchen (DE), 07/12/1998--07/17/1998; Other Information: PBD: 21 May 1999
Research Org:
Los Alamos National Lab., NM (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; SCANNING TUNNELING MICROSCOPY; GALLIUM ARSENIDES; RESOLUTION; SIGNALS