OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

Conference · Tue Jan 18 00:00:00 EST 2000

OSTI ID:750318

HAN, JUNG; FIGIEL, JEFFREY J; PETERSEN, GARY A; MYERS, JR, SAMUEL M; CRAWFORD, MARY H; BANAS, MICHAEL ANTHONY; HEARNE, SEAN JOSEPH

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 750318
• Report Number(s): SAND99-2354C; TRN: US200221%%289
• Resource Relation: Conference: 1999 Fall MRS, Boston, MA (US), 11/24/1999--12/03/1999; Other Information: PBD: 18 Jan 2000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BACKSCATTERING
LATTICE PARAMETERS
PHOTOLUMINESCENCE
X-RAY DIFFRACTION
CRYSTAL GROWTH
ALUMINIUM NITRIDES
GALLIUM NITRIDES
INDIUM NITRIDES
VAPOR PHASE EPITAXY
MICROELECTRONIC CIRCUITS