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Title: OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.
Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
750318
Report Number(s):
SAND99-2354C
TRN: US200221%%289
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 1999 Fall MRS, Boston, MA (US), 11/24/1999--12/03/1999; Other Information: PBD: 18 Jan 2000
Research Org:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org:
US Department of Energy (US)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BACKSCATTERING; LATTICE PARAMETERS; PHOTOLUMINESCENCE; X-RAY DIFFRACTION; CRYSTAL GROWTH; ALUMINIUM NITRIDES; GALLIUM NITRIDES; INDIUM NITRIDES; VAPOR PHASE EPITAXY; MICROELECTRONIC CIRCUITS