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Title: Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C

Abstract

Surface acoustic waves (SAW's) were used to study the influence of defects on the elastic properties of epitaxial films of semiconductors. The object of this study was As-rich GaAs grown by molecular-beam-epitaxy at 220 {degree}C. The SAW velocity on 0.3-wavelength-thick epilayers was 1.2% smaller than on the substrate alone. That velocity difference decreased after loss of some excess As as a result of 350 {degree}C--435 {degree}C anneals. A persistent increase as much as 0.4% of the SAW velocity at low temperatures was observed after illumination; this increase could be quenched by annealing at 120--130 K. This behavior is caused by the metastable transition of EL2-like As{sub Ga} defects and constitutes the direct experimental proof of the illumination-induced large lattice relaxation of this defect. The SAW velocity increase was correlated with the persistent bleaching of EL2-related optical absorption. The spectral dependence of rate of illumination-induced SAW velocity increase was measured.

Authors:
;  [1];  [2]
  1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94120 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
  2. Berkeley Sensor Actuator Center, Electronics Research Laboratory, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
7282424
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter; (United States)
Additional Journal Information:
Journal Volume: 45:8; Journal ID: ISSN 0163-1829
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL DEFECTS; ANNEALING; MECHANICAL PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; TEMPERATURE RANGE 0400-1000 K; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE; 360602* - Other Materials- Structure & Phase Studies

Citation Formats

Khachaturyan, K, Weber, E R, and White, R M. Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C. United States: N. p., 1992. Web. doi:10.1103/PhysRevB.45.4258.
Khachaturyan, K, Weber, E R, & White, R M. Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C. United States. https://doi.org/10.1103/PhysRevB.45.4258
Khachaturyan, K, Weber, E R, and White, R M. 1992. "Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C". United States. https://doi.org/10.1103/PhysRevB.45.4258.
@article{osti_7282424,
title = {Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C},
author = {Khachaturyan, K and Weber, E R and White, R M},
abstractNote = {Surface acoustic waves (SAW's) were used to study the influence of defects on the elastic properties of epitaxial films of semiconductors. The object of this study was As-rich GaAs grown by molecular-beam-epitaxy at 220 {degree}C. The SAW velocity on 0.3-wavelength-thick epilayers was 1.2% smaller than on the substrate alone. That velocity difference decreased after loss of some excess As as a result of 350 {degree}C--435 {degree}C anneals. A persistent increase as much as 0.4% of the SAW velocity at low temperatures was observed after illumination; this increase could be quenched by annealing at 120--130 K. This behavior is caused by the metastable transition of EL2-like As{sub Ga} defects and constitutes the direct experimental proof of the illumination-induced large lattice relaxation of this defect. The SAW velocity increase was correlated with the persistent bleaching of EL2-related optical absorption. The spectral dependence of rate of illumination-induced SAW velocity increase was measured.},
doi = {10.1103/PhysRevB.45.4258},
url = {https://www.osti.gov/biblio/7282424}, journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 45:8,
place = {United States},
year = {Sat Feb 15 00:00:00 EST 1992},
month = {Sat Feb 15 00:00:00 EST 1992}
}