Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C
Abstract
Surface acoustic waves (SAW's) were used to study the influence of defects on the elastic properties of epitaxial films of semiconductors. The object of this study was As-rich GaAs grown by molecular-beam-epitaxy at 220 {degree}C. The SAW velocity on 0.3-wavelength-thick epilayers was 1.2% smaller than on the substrate alone. That velocity difference decreased after loss of some excess As as a result of 350 {degree}C--435 {degree}C anneals. A persistent increase as much as 0.4% of the SAW velocity at low temperatures was observed after illumination; this increase could be quenched by annealing at 120--130 K. This behavior is caused by the metastable transition of EL2-like As{sub Ga} defects and constitutes the direct experimental proof of the illumination-induced large lattice relaxation of this defect. The SAW velocity increase was correlated with the persistent bleaching of EL2-related optical absorption. The spectral dependence of rate of illumination-induced SAW velocity increase was measured.
- Authors:
-
- Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94120 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
- Berkeley Sensor Actuator Center, Electronics Research Laboratory, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
- Publication Date:
- OSTI Identifier:
- 7282424
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review, B: Condensed Matter; (United States)
- Additional Journal Information:
- Journal Volume: 45:8; Journal ID: ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL DEFECTS; ANNEALING; MECHANICAL PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; TEMPERATURE RANGE 0400-1000 K; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE; 360602* - Other Materials- Structure & Phase Studies
Citation Formats
Khachaturyan, K, Weber, E R, and White, R M. Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C. United States: N. p., 1992.
Web. doi:10.1103/PhysRevB.45.4258.
Khachaturyan, K, Weber, E R, & White, R M. Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C. United States. https://doi.org/10.1103/PhysRevB.45.4258
Khachaturyan, K, Weber, E R, and White, R M. 1992.
"Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C". United States. https://doi.org/10.1103/PhysRevB.45.4258.
@article{osti_7282424,
title = {Surface-acoustic-wave study of defects in GaAs grown by molecular-beam epitaxy at 220 degree C},
author = {Khachaturyan, K and Weber, E R and White, R M},
abstractNote = {Surface acoustic waves (SAW's) were used to study the influence of defects on the elastic properties of epitaxial films of semiconductors. The object of this study was As-rich GaAs grown by molecular-beam-epitaxy at 220 {degree}C. The SAW velocity on 0.3-wavelength-thick epilayers was 1.2% smaller than on the substrate alone. That velocity difference decreased after loss of some excess As as a result of 350 {degree}C--435 {degree}C anneals. A persistent increase as much as 0.4% of the SAW velocity at low temperatures was observed after illumination; this increase could be quenched by annealing at 120--130 K. This behavior is caused by the metastable transition of EL2-like As{sub Ga} defects and constitutes the direct experimental proof of the illumination-induced large lattice relaxation of this defect. The SAW velocity increase was correlated with the persistent bleaching of EL2-related optical absorption. The spectral dependence of rate of illumination-induced SAW velocity increase was measured.},
doi = {10.1103/PhysRevB.45.4258},
url = {https://www.osti.gov/biblio/7282424},
journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 45:8,
place = {United States},
year = {Sat Feb 15 00:00:00 EST 1992},
month = {Sat Feb 15 00:00:00 EST 1992}
}