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Title: Selenization of metallic Cu-In thin films for CuInSe sub 2 solar cells

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.343588· OSTI ID:7271631
;  [1]
  1. Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Federal Republic of Germany (DE)

A new approach for formation of photovoltaic CuInSe{sub 2} films by chalcogenization of Cu-In multilayers with a thin selenium layer and subsequent heat treatments is presented. Morphological, compositional, and structural properties of films along with aspects of various processing conditions are discussed. The possibility of obtaining perfectly homogeneous chalcopyrite ternary films was affected by composition deviations from stoichiometry, although films obtained in a modified two-stage heat treatment processing were of good structural and photovoltaic quality. Heterojunctions with (Zn, Cd)S as window material showed efficiencies better than 5%, mainly limited by low open-circuit voltage and poor fill factor. Short-circuit currents were comparable to CuInSe{sub 2}-based cells fabricated by multiple-source evaporation.

OSTI ID:
7271631
Journal Information:
Journal of Applied Physics; (USA), Vol. 66:12; ISSN 0021-8979
Country of Publication:
United States
Language:
English