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Title: A spin dependent recombination study of radiation induced defects at and near the Si/SiO sub 2 interface

Abstract

A new electron spin resonance technique, spin dependent recombination (SDR) permits extremely rapid, high signal to noise ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. Using SDR the authors observe the radiation induced buildup of Pbo and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with (100) silicon surface orientation. Earlier ESR studies of extremely large ({approximately}1 cm{sup 2}) capacitor structures have identified Pb and E' centers as the dominant radiation induced defects in MOS devices. The authors discuss how their results extend and confirm these earlier results and at least qualitatively answer objections to the earlier work related to the relevance of large capacitor studies to transistors in an integrated circuit.

Authors:
;  [1]
  1. Pennsylvania State Univ., University Park, PA (US)
Publication Date:
OSTI Identifier:
7198830
Report Number(s):
CONF-890723-
Journal ID: ISSN 0018-9499; CODEN: IETNA; CNN: DNA002-86-0055; TRN: 90-014121
Resource Type:
Conference
Journal Name:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
Additional Journal Information:
Journal Volume: 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; Journal ID: ISSN 0018-9499
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; INTERFACES; HOLE MOBILITY; MOSFET; RADIATION HARDENING; CAPACITORS; DESIGN; ELECTRON SPIN RESONANCE; INTEGRATED CIRCUITS; QUALITY ASSURANCE; RECOMBINATION; SEMICONDUCTOR JUNCTIONS; SIGNAL-TO-NOISE RATIO; SILICON OXIDES; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; FIELD EFFECT TRANSISTORS; HARDENING; JUNCTIONS; MAGNETIC RESONANCE; MICROELECTRONIC CIRCUITS; MOBILITY; MOS TRANSISTORS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; RESONANCE; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 360605 - Materials- Radiation Effects; 656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)

Citation Formats

Jupina, M A, and Lenahan, P M. A spin dependent recombination study of radiation induced defects at and near the Si/SiO sub 2 interface. United States: N. p., 1989. Web.
Jupina, M A, & Lenahan, P M. A spin dependent recombination study of radiation induced defects at and near the Si/SiO sub 2 interface. United States.
Jupina, M A, and Lenahan, P M. 1989. "A spin dependent recombination study of radiation induced defects at and near the Si/SiO sub 2 interface". United States.
@article{osti_7198830,
title = {A spin dependent recombination study of radiation induced defects at and near the Si/SiO sub 2 interface},
author = {Jupina, M A and Lenahan, P M},
abstractNote = {A new electron spin resonance technique, spin dependent recombination (SDR) permits extremely rapid, high signal to noise ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. Using SDR the authors observe the radiation induced buildup of Pbo and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with (100) silicon surface orientation. Earlier ESR studies of extremely large ({approximately}1 cm{sup 2}) capacitor structures have identified Pb and E' centers as the dominant radiation induced defects in MOS devices. The authors discuss how their results extend and confirm these earlier results and at least qualitatively answer objections to the earlier work related to the relevance of large capacitor studies to transistors in an integrated circuit.},
doi = {},
url = {https://www.osti.gov/biblio/7198830}, journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)},
issn = {0018-9499},
number = ,
volume = 36:6,
place = {United States},
year = {Fri Dec 01 00:00:00 EST 1989},
month = {Fri Dec 01 00:00:00 EST 1989}
}

Conference:
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