Proton damage effects in an EEV CCD imager

Hopkinson, G R; Chlebek, C

Title: Proton damage effects in an EEV CCD imager

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Abstract

An EEV three phase CCD has been irradiated by 40 MeV protons up to a fluence of 3 {times} 10{sup 8} p/cm{sup 2}. New dark charge spikes appeared, but these were smaller than those previously reported for virtual phase CCDs. Dark charge maps were obtained at several temperatures. The larger spikes showed erratic temperature behavior, the smaller ones decreased in size as the temperatures decreased but at a rate slower than the mean dark charge level. Possible mechanisms are discussed

Authors:

Hopkinson, G R ^[1]; Chlebek, C ^[2]

Sira Ltd., Chislehurst, Kent BR7 5EH, (GB)
DLR, PT-TN4, Postfach 90 60 58, 5000 Koln 90 (DE)

Publication Date:: Fri Dec 01 00:00:00 EST 1989

OSTI Identifier:: 7198795

Report Number(s):: CONF-890723-
Journal ID: ISSN 0018-9499; CODEN: IETNA; TRN: 90-014146

Resource Type:: Conference

Journal Name:: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

Additional Journal Information:: Journal Volume: 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; Journal ID: ISSN 0018-9499

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CHARGE-COUPLED DEVICES; IRRADIATION; IMAGE SCANNERS; RADIATION HARDENING; MEV RANGE 10-100; PROTONS; BARYONS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; HARDENING; MEV RANGE; NUCLEONS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 440100 - Radiation Instrumentation

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                    Hopkinson, G R, and Chlebek, C. Proton damage effects in an EEV CCD imager.  United States: N. p., 1989. 
        Web.

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                    Hopkinson, G R, & Chlebek, C. Proton damage effects in an EEV CCD imager.  United States.

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                    Hopkinson, G R, and Chlebek, C. 1989.  
        "Proton damage effects in an EEV CCD imager".  United States.

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@article{osti_7198795,

  title        = {Proton damage effects in an EEV CCD imager},

  author       = {Hopkinson, G R and Chlebek, C},

  abstractNote = {An EEV three phase CCD has been irradiated by 40 MeV protons up to a fluence of 3 {times} 10{sup 8} p/cm{sup 2}. New dark charge spikes appeared, but these were smaller than those previously reported for virtual phase CCDs. Dark charge maps were obtained at several temperatures. The larger spikes showed erratic temperature behavior, the smaller ones decreased in size as the temperatures decreased but at a rate slower than the mean dark charge level. Possible mechanisms are discussed},

  doi          = {},

  url          = {https://www.osti.gov/biblio/7198795},
  journal      = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)},

  issn         = {0018-9499},

  number       = ,

  volume       = 36:6,

  place        = {United States},

  year         = {Fri Dec 01 00:00:00 EST 1989},

  month        = {Fri Dec 01 00:00:00 EST 1989}

}

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