U.S. Department of EnergyOffice of Scientific and Technical Information
Evaluation of new metal-insulator-semiconductor varistor: Final report
Abstract
A new, composite varistor material containing a metal, an insulator, and a semiconductor was evaluated. Although other constituents can be substituted, the materials that were investigated contained varying proportions of nickel metal, silicon dioxide, and silicon carbide in a silicon rubber binder. The material has rubber-like flexibility and is easily formed into complex shapes. A higher leakage resistivity (/approximately/10/sup 12/ ohm cm) and greater nonlinearity (/approximately/10) than for commercial silicon carbide varistors will permit the material to be used as a gapless surge suppressor. The breakdown voltage (1 kV/cm-10 kV/cm) and other properties of the material vary with composition. High-current capability (>200 A/cm/sup 2/) and good energy absorption (>40 J/cm/sup 3/) are found. The material exhibits a low-temperature coefficient (/approximately/4 x 10/sup -3//K) and a low dielectric constant (/approximately/10) with no observed loss peak. These dielectric properties are suited to high-frequency applications, such as antenna protection. The material has a response time (<1 ns) that should provide some protection against fast pulses generated by nuclear and directed-beam weapons. At this stage, the physics of the material are mostly conjecture, but the electrical conduction is almost certainly controlled by grain-boundary barriers. However, the conduction is not thermally activated, and it probablymore »
- Authors:
- Publication Date:
- Research Org.:
- Oak Ridge National Lab., TN (USA)
- OSTI Identifier:
- 7189648
- Report Number(s):
- ORNL/TM-10886
ON: DE88015708
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Technical Report
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE; SEMICONDUCTOR RESISTORS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; NICKEL; PROGRESS REPORT; SILICON CARBIDES; SILICON OXIDES; TESTING; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; DOCUMENT TYPES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RESISTORS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSITION ELEMENTS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 360104 - Metals & Alloys- Physical Properties; 360603 - Materials- Properties
Citation Formats
Modine, F A. Evaluation of new metal-insulator-semiconductor varistor: Final report. United States: N. p., 1988.
Web.
Modine, F A. Evaluation of new metal-insulator-semiconductor varistor: Final report. United States.
Modine, F A. 1988.
"Evaluation of new metal-insulator-semiconductor varistor: Final report". United States.
@article{osti_7189648,
title = {Evaluation of new metal-insulator-semiconductor varistor: Final report},
author = {Modine, F A},
abstractNote = {A new, composite varistor material containing a metal, an insulator, and a semiconductor was evaluated. Although other constituents can be substituted, the materials that were investigated contained varying proportions of nickel metal, silicon dioxide, and silicon carbide in a silicon rubber binder. The material has rubber-like flexibility and is easily formed into complex shapes. A higher leakage resistivity (/approximately/10/sup 12/ ohm cm) and greater nonlinearity (/approximately/10) than for commercial silicon carbide varistors will permit the material to be used as a gapless surge suppressor. The breakdown voltage (1 kV/cm-10 kV/cm) and other properties of the material vary with composition. High-current capability (>200 A/cm/sup 2/) and good energy absorption (>40 J/cm/sup 3/) are found. The material exhibits a low-temperature coefficient (/approximately/4 x 10/sup -3//K) and a low dielectric constant (/approximately/10) with no observed loss peak. These dielectric properties are suited to high-frequency applications, such as antenna protection. The material has a response time (<1 ns) that should provide some protection against fast pulses generated by nuclear and directed-beam weapons. At this stage, the physics of the material are mostly conjecture, but the electrical conduction is almost certainly controlled by grain-boundary barriers. However, the conduction is not thermally activated, and it probably has a percolative character. The material will not replace zinc oxide varistors at this time, but it will find specialized applications in which its flexibility, formability, and frequency response are advantageous. 8 refs., 12 figs., 2 tabs.},
doi = {},
url = {https://www.osti.gov/biblio/7189648},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 1988},
month = {Mon Aug 01 00:00:00 EDT 1988}
}