Negative resistance in an organic thin film

Journal Article · Thu Aug 20 00:00:00 EDT 1992 · Modern Physics Letters B; (Singapore)

DOI:https://doi.org/10.1142/S021798499200209X· OSTI ID:7181625

Ehara, S ^[1]; Takagi, T ^[2]; Yoshida, T; Inaba, H; Naito, H; Okuda, M ^[3]

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1. Sharp Central Research Lab. (Japan)
2. Ion Engineering Research Inst. Corp. Tsuda, Hirakata, Osaka 573-15 (Japan)
3. Dept. of Electronics, Univ. of Osaka Prefecture, Gakuen, Sakai, Osaka 593 (Japan)

This paper reports that the negative resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This negative resistance may be understood by the theory of a molecular resonance tunneling effect.

• OSTI ID: 7181625
• Journal Information: Modern Physics Letters B; (Singapore), Vol. 6:19; ISSN 0217-9849
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ORGANIC MATTER
ELECTRIC CONDUCTIVITY
SEMICONDUCTOR MATERIALS
GRAPHITE
MOLECULES
RESONANCE
SCANNING ELECTRON MICROSCOPY
THIN FILMS
TUNNEL EFFECT
CARBON
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTAL MINERALS
ELEMENTS
FILMS
MATERIALS
MATTER
MICROSCOPY
MINERALS
NONMETALS
PHYSICAL PROPERTIES
360606* - Other Materials- Physical Properties- (1992-)