Determination of the strain field from an HREM image of a Si Lomer dislocation. [High-resolution electron microscopy (HREM)]

Conference · Sun Mar 01 00:00:00 EST 1992

OSTI ID:7181326

Tsai, K H; Schwartzman, A F; Gallego, R; Ortiz, M; Kim, K S ^[1]; O'Keefe, M A ^[2]

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1. Brown Univ., Providence, RI (United States). Div. of Engineering
2. Lawrence Berkeley Lab., CA (United States)

A new approach to quantitative deformation characterization of high-resolution electron microscopy (HREM) defect images has been developed. The principle of this technique, (Computational Fourier Transform Deformation (CFTD)) is to extract an accurate displacement field about a defect from its HREM image using Fourier transformation procedures. The methodology's unique feature is to digitize the defect image and compute the Moire pattern, from which the displacement field is obtained, without the need for an external reference lattice image, normally associated with the interference phenomena. From this data, the displacement gradient can be calculated, which yields much information on the experimental deformation mechanics. One question that has arisen is whether different imaging conditions of the same defect affects the results of the CFM analysis. We have studied this problem by analyzing the strain components of simulated images of a Lomer dislocation in Si and present our findings here.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE; USDOD; National Science Foundation (NSF); USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7181326
• Report Number(s): LBL-32129; CONF-920819-23; ON: DE92041176; CNN: N00014-90-J-1295; DMR-9002994
• Resource Relation: Conference: Annual meeting of the Electron Microscopy Society (EMS) of America, Boston, MA (United States), 16-21 Aug 1992; Other Information: Extended abstract
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
DEFORMATION
ELECTRON MICROSCOPY
SILICON
DISLOCATIONS
FOURIER TRANSFORMATION
IMAGE PROCESSING
IMAGES
SIMULATION
STRAINS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
INTEGRAL TRANSFORMATIONS
LINE DEFECTS
MICROSCOPY
PROCESSING
SEMIMETALS
TRANSFORMATIONS
400101* - Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
360602 - Other Materials- Structure & Phase Studies
360603 - Materials- Properties