Effect of high-power laser radiation on characteristics of thin silicon nitride films

Journal Article · Mon Sep 01 00:00:00 EDT 1986 · Sov. Microelectron.; (United States)

OSTI ID:7170926

Roizin, Y O; Khuan, K S

High-power laser radiation is used in microelectronic technology for purposes such as annealing radiation defects in MOS structures after ion implantation. This paper considers accumulated changes in electrical characteristics of metal-nitride-oxide-semiconductor (MNOS) structures under the action of neodymium laser pulses with an energy density below the visible damage threshold. The experimental results obtained are interpreted.

• Research Organization: Odessa State Univ
• OSTI ID: 7170926
• Journal Information: Sov. Microelectron.; (United States), Vol. 15:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
ELECTRIC CONDUCTIVITY
LASER RADIATION
TEMPERATURE EFFECTS
ANNEALING
BORON
CARRIER DENSITY
CRYSTAL DEFECTS
DIELECTRIC PROPERTIES
DOPED MATERIALS
ION IMPLANTATION
LEAKAGE CURRENT
NEODYMIUM LASERS
PHOSPHORUS
THIN FILMS
CRYSTAL STRUCTURE
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
HEAT TREATMENTS
LASERS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMIMETALS
SILICON COMPOUNDS
SOLID STATE LASERS
360204* - Ceramics
Cermets
& Refractories- Physical Properties
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies