Variations in semiconductor device response in a medium-energy x-ray dose-enhancing environment
The authors performed a series of experiments to investigate the response of semiconductor devices to medium-energy x-ray irradiation under conditions in which dose-enhancement effects are very important. They find that the response of MOS capacitors to the same ''dose-enhanced'' radiation depends not only on the increased dose, but also on the incident radiation spectra, device temperature and processing, and/or oxide thickness and electric field. In many cases, these dependencies cannot be explained simply in terms of existing knowledge of basic mechanisms of radiation effects on MOS devices (for example, electron-hole recombination and hole transport and trapping), or by present Monte Carlo electron/photon transport codes such as the Integrated Tiger Series (ITS). In addition, the response of semiconductor diodes to the ''dose-enhanced'' radiation appears to be qualitatively different from that of MOS capacitors, and differs markedly in value from the ITS code predictions. These results demonstrate that an improved understanding of semiconductor device response to ''enhanced'' radiation is needed to assure simulation fidelity of tests of devices to be used in dose-enhancing environments.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 7157855
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. NS-34:6; Conference: Annual conference on nuclear and space radiation effects, Snowmass Village, CO, USA, 28 Jul 1987
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CAPACITORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
MOS TRANSISTORS
ELECTRON TRANSFER
ENVIRONMENTAL EFFECTS
EXPERIMENTAL DATA
INTEGRATED CIRCUITS
IRRADIATION
MONTE CARLO METHOD
PHOTON TRANSPORT
SEMICONDUCTOR DIODES
VARIATIONS
X-RAY SPECTRA
DATA
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
INFORMATION
MICROELECTRONIC CIRCUITS
NEUTRAL-PARTICLE TRANSPORT
NUMERICAL DATA
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SPECTRA
TESTING
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems