Application of InAlAs/GaAs superlattice alloys to GaAs solar cells

Conference · Mon Jan 01 00:00:00 EST 1990

DOI:https://doi.org/10.1109/PVSC.1990.111600· OSTI ID:7154065

Drummond, T J; Gee, J ^[1]; Terry, F L; Weng, R ^[2]

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1. Sandia National Labs., Albuquerque, NM (USA)
2. Michigan Univ., Ann Arbor, MI (USA). Dept. of Electrical Engineering and Computer Science

AlGaAs/GaAs solar cells are typically characterized as having relatively high interface recombination velocities at the heteroface. This work examines some of the factors influencing the design of solar cell window layers and considers the effect of substituting InAlAs/GaAs superlattice alloys and InAlAs bulk alloys in place of AlGaAs. Potential advantages are reduced surface recombination at the heterojunction, reduced thermionic emission into the window layer, thinner window layers and reduced absorption in the window layer. 9 refs., 5 figs.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: DOE/CE
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7154065
• Report Number(s): SAND-90-1560C; CONF-900542-13; ON: DE90013070
• Resource Relation: Conference: 21. Institute for Electrical and Electronics Engineers photovoltaic specialists conference, Kissimmee, FL (USA), 21-25 May 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
GALLIUM ARSENIDES
PERFORMANCE
SILICON SOLAR CELLS
DESIGN
ABSORPTION
ALUMINIUM ARSENIDES
DOPED MATERIALS
HEAT FLUX
HETEROJUNCTIONS
LAYERS
MEASURING METHODS
RECOMBINATION
SURFACE PROPERTIES
WINDOWS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
MATERIALS
OPENINGS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
360602* - Other Materials- Structure & Phase Studies
140501 - Solar Energy Conversion- Photovoltaic Conversion