Temperature-induced amorphization of SiO[sub 2] stishovite

Journal Article · Tue Nov 01 00:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.12984· OSTI ID:7126794

Grimsditch, M ^[1]; Popova, S ^[2]; Brazhkin, V V; Voloshin, R N ^[3]

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1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States) Institute of High Pressure Physics, 142092 Troick Moscow Region (Russian Federation)
3. Institute of High Pressure Physics, 142092 Troick Moscow Region (Russian Federation)

A Raman-scattering investigation of stishovite, a high-pressure crystalline polymorph of SiO[sub 2], shows that at around 650 [degree]C it becomes amorphous. The amorphous material produced during the initial stages of amorphization is not identical to ordinary silica since it exhibits features of the high-pressure amorphous polymorph. Above 800 [degree]C there is little remaining evidence of stishovite but the amorphous material has transformed to a state indistinguishable from that of silica. Annealing effects in densified silica are also presented and compared with the stishovite results.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 7126794
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 50:17; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
AMORPHOUS STATE
STISHOVITE
PHASE TRANSFORMATIONS
RAMAN SPECTRA
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
CHALCOGENIDES
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SPECTRA
TEMPERATURE RANGE
360602* - Other Materials- Structure & Phase Studies