Temperature dependent GaAs MMIC radiation effects

Conference · Wed Dec 01 00:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7125310

Anderson, W T; Roussos, J A ^[1]; Gerdes, J ^[2]

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1. Naval Research Lab., Washington, DC (United States)
2. Army Pulse Radiation Facility, Aberdeen Proving Ground, MD (United States)

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

• OSTI ID: 7125310
• Report Number(s): CONF-930704-; CODEN: IETNAE
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:6Pt1; Conference: NSREC '93: international nuclear and space radiation effects conference, Snowbird, UT (United States), 19-23 Jul 1993; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
X RADIATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
GALLIUM COMPOUNDS
INFORMATION
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
RADIATIONS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems