Primary ion sources for EBIS devices
- Lawrence Berkeley Laboratory, Berkeley, California 94720 (USA)
The ion-optical conditions for primary ion sources that could be installed in an EBIS injector are derived, assuming a realistic set of fixed parameters to be imposed by the EBIS. It is shown how these requirements may be met, and that beam currents of up to 2 mA can be generated with the postulated emittance. This derivation, even though carried out for one specific case, gives general guide lines how to proceede for other conditions as well. In the second part, different types of ion sources are presented that are likely candidates for EBIS injector sources. Beam current examples are given and the basic features of the sources discussed. The emphasis of this paper is put on the reliable production of ion beams, rather than attempting to furnish a representative cross section of the existing ion source varieties.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7120410
- Report Number(s):
- CONF-881154-; CODEN: APCPC; TRN: 90-018077
- Journal Information:
- AIP Conference Proceedings (American Institute of Physics); (USA), Vol. 188:1; Conference: International symposium on electron beam ion sources and their applications, Upton, NY (USA), 14-18 Nov 1988; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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