Heterojunction solar cell with passivated emitter surface

Patent · Tue May 31 00:00:00 EDT 1994

OSTI ID:7111066

Olson, J M; Kurtz, S R

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

• DOE Contract Number: AC02-83CH10093
• Assignee: Midwest Research Inst., Kansas City, MO (United States)
• Patent Number(s): US 5316593; A
• Application Number: PPN: US 7-977109
• OSTI ID: 7111066
• Resource Relation: Patent File Date: 16 Nov 1992
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
GALLIUM PHOSPHIDE SOLAR CELLS
ENERGY EFFICIENCY
INDIUM PHOSPHIDE SOLAR CELLS
ANTIREFLECTION COATINGS
DESIGN
COATINGS
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion