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Title: Pressure and concentration dependence of the quantum corrections to the resistivity in CuTi alloys

Journal Article · · Journal of Physical Chemistry; (USA)
DOI:https://doi.org/10.1021/j100366a021· OSTI ID:7107960
; ;  [1]
  1. Technische Universitaet, Muenchen (Germany, F.R.)

We present a full set of pressure- and temperature-dependent resistivity data for the regions 0 < P < 10 GPa, 1.4 < T < 30 K, and 43 < x < 88, Here, x denotes the concentration of the amorphous alloy Cu{sub x}Ti{sub 100-x}. These results are analyzed in terms of a temperature-independent Boltzmann resistivity and additive quantum corrections, such as the quantum interference and the Coulomb correction. It is shown how the various parameters involved in these contributions vary with pressure. Certain arguments are given in an effort to understand qualitatively the observed behavior.

OSTI ID:
7107960
Journal Information:
Journal of Physical Chemistry; (USA), Vol. 94:3; ISSN 0022-3654
Country of Publication:
United States
Language:
English