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Title: Epitaxially-Grown GaN Junction Field Effect Transistors

Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.
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Publication Date:
OSTI Identifier:
Report Number(s):
ON: DE00007044
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Transaction on Electron Devices
Research Org:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Sponsoring Org:
Country of Publication:
United States
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; Gallium Nitrides; Gallium Nitrides; Junction Transistors; Junction Transistors; Field Effect Transistors; Field Effect Transistors; Epitaxy; Epitaxy; Performance; Performance