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Title: Semiconductor devices incorporating multilayer interference regions

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.
Authors:
; ; ;
Publication Date:
OSTI Identifier:
7043392
Report Number(s):
PATENTS-US-A6091560
DOE Contract Number:
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Research Org:
Sandia National Labs., Albuquerque, NM (USA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; FABRY-PEROT INTERFEROMETER; INVENTIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TUNING; INTERFEROMETERS; JUNCTIONS; LASERS; MATERIALS; MEASURING INSTRUMENTS; SEMICONDUCTOR DEVICES 420300* -- Engineering-- Lasers-- (-1989)