Physics of thin films. Volume 13
Abstract
This volume of Physics of Thin Films contains five articles, four of which deal primarily with the influence of ions or of optical energy on the deposition, properties, or etching of thin films. The fifth article deals with the important technological problem of contacts to GaAs devices.
- Authors:
- Publication Date:
- OSTI Identifier:
- 7023104
- Resource Type:
- Book
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 74 ATOMIC AND MOLECULAR PHYSICS; THIN FILMS; PHYSICS; DEPOSITION; ELECTRIC CONTACTS; ETCHING; GALLIUM ARSENIDES; IONS; LEADING ABSTRACT; ABSTRACTS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DOCUMENT TYPES; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; GALLIUM COMPOUNDS; PNICTIDES; SURFACE FINISHING; 640302* - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory
Citation Formats
Vossen, J L, and Francombe, M H. Physics of thin films. Volume 13. United States: N. p., 1987.
Web.
Vossen, J L, & Francombe, M H. Physics of thin films. Volume 13. United States.
Vossen, J L, and Francombe, M H. 1987.
"Physics of thin films. Volume 13". United States.
@article{osti_7023104,
title = {Physics of thin films. Volume 13},
author = {Vossen, J L and Francombe, M H},
abstractNote = {This volume of Physics of Thin Films contains five articles, four of which deal primarily with the influence of ions or of optical energy on the deposition, properties, or etching of thin films. The fifth article deals with the important technological problem of contacts to GaAs devices.},
doi = {},
url = {https://www.osti.gov/biblio/7023104},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1987},
month = {Thu Jan 01 00:00:00 EST 1987}
}
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