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Title: Sequential imposed layer epitaxy of cuprate films

Conference · · Journal of Superconductivity; (United States)
OSTI ID:7021280

Layer-by-layer epitaxy has been used to grow cuprate films since the discovery of high-Tc compounds. This deposition technique is in principle suitable for the growth of layered crystalline structures. However, the sequential deposition of atomic layer by atomic layer of cuprate compounds has presently not been optimized. Nevertheless, this deposition process is the only one which allows one to build artificial cell structures such as Bi[sub 2]Sr[sub 2]Ca[sub (n[minus]1)]Cu[sub n]O[sub y] with n as large as 10. This process will also be the best one to grow films of the so-called infinite layer phase compounds belonging to the Sr[sub 1[minus]x]Ca[sub x]CuO[sub 2] family, in order to improve the transport properties and the morphological properties of the cuprate films. When performed at high substrate temperature (typically more than 600[degree]C), the layer-by-layer epitaxy of cuprates exhibits usually 3D aggregate nucleation. Then the growth of the film no longer obeys the layer-by-layer sequence imposed during the deposition. We present here two experimental situations of true 2D sequential imposed layer epitaxy; the growth at 500[degree]C under atomic oxygen pressure of Bi[sub 2]Sr[sub 2]CuO[sub 6] and of Sr[sub 1[minus]x]Ca[sub y]CuO[sub 2] phases. 20 refs., 2 figs.

OSTI ID:
7021280
Report Number(s):
CONF-930710-; CODEN: JOUSEH; TRN: 94-014497
Journal Information:
Journal of Superconductivity; (United States), Vol. 7:1; Conference: Physics and chemistry of molecular and oxide superconductors conference, Eugene, OR (United States), 27-31 Jul 1993; ISSN 0896-1107
Country of Publication:
United States
Language:
English